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Interaction of thin erbium films with aluminum

Author
Harris, J. M.
Published
United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Boespflug, E. P., Holloway, D. M., and Provo, J. L.

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Summary
Aluminum is a potential substrate to support thin erbium films used for high-temperature, hydrogen isotope storage. Both aluminum and erbium are reactive metals, and the interaction of the two could make for an unstable combination at elevated temperatures. Experiments designed to investigate the formation of intermetallic compounds between aluminum substrates and vacuum deposited erbium films are reported. Compound formation was detected at temperatures as low as 275/sup 0/C. The end product, ErAl3, resulted when the reaction was allowed to continue until all the erbium was consumed. The presence of deuterium bound into the erbium thin film does not prevent the erbium-aluminum reaction. However, anodizing the aluminum substrate prior to the erbium deposition does prevent interactions at temperatures of 500/sup 0/C for one hour.
Report Numbers
DE84013312; SAND-83-1054
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC04-76DP00789
OSTI Identifier 6818696
Research organization: General Electric Co., St. Petersburg, FL (USA). Neutron Devices Dept.
Research organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States).
Funding Information
Sponsored by USDOE.
View MARC record | catkey: 47342029