Email RIS file
Bookmark
Report an Issue

AlGaAs/Ga/As radiation hardened photodiodes

Author
Wiczer, J. J.
Published
United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Barnes, C. E., Dawson, L. R., Fischer, T. A., and Zipperian, T. E.

Availability

Browse Nearby on Shelf
I Want It
I Want It

Finding items...

Summary
We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photolithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported. 10 references.
Report Numbers
DE84016621; SAND-84-0679C; CONF-840872-22
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC04-76DP00789
OSTI Identifier 6544950
Research organization: Sandia National Labs., Albuquerque, NM (USA).
View MARC record | catkey: 47343727