Actions for Advanced amorphous materials for photovoltaic conversion. Annual report for 1983
Advanced amorphous materials for photovoltaic conversion. Annual report for 1983
- Author
- Vanier, P. E.
- Published
- United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984] - Physical Description
- microfiche : negative ; 11 x 15 cm
- Additional Creators
- Corderman, R. R., Kampas, F. J., and Rajeswaran, G.
- Summary
- The task of this program is to fabricate and characterize thin-film amorphous semiconductor photovoltaic devices, and to develop new materials with properties which help to improve the conversion efficiency and stability of the devices. An important goal of the program is to increase the rate of deposition of high-quality semiconducting material in order to make the technology more economical. The materials include intrinsic and doped hydrogenated amorphous silicon and related alloys deposited by rf capacitive glow discharge, and transparent conducting layers such as indium oxide and indium tin oxide. The improvement of deposition rate and the optimization of film properties for device applications require a fundamental understanding of the processes occurring in the glow-discharge plasma and at the surface of the growing film. Techniques such as optical emission spectroscopy and mass spectrometry are used to analyze these processes. The prepared films are studied using optical and infrared spectroscopy, electron microscopy, photoconductivity, and photoluminescence. The film properties are then correlated with plasma processing parameters. High-efficiency photovoltaic devices are fabricated in order to test the usefulness of the materials for the different layers of a solar cell, and to explore problems which may occur at the interfaces between these layers. Factors affecting the efficiency and stability of such cells are deduced from an analysis of their electrical characteristics and spectral response.
- Report Numbers
- DE84017198; BNL-51772
- Other Subject(s)
- 14 solar energy
- 140501 - solar energy conversion- photovoltaic conversion
- Amorphous state
- Chalcogenides
- Deposition
- Direct energy converters
- Doped materials
- Electric conductivity
- Electrical properties
- Electron microscopy
- Equipment
- Fabrication
- Films
- Gas analysis
- Hydrides
- Hydrogen compounds
- Impurities
- Indium compounds
- Indium oxides
- Infrared spectra
- Luminescence
- Materials
- Microscopy
- Organic compounds
- Organic silicon compounds
- Oxides
- Oxygen compounds
- Performance
- Photoconductivity
- Photoelectric cells
- Photoluminescence
- Photovoltaic cells
- Physical properties
- Silanes
- Silicon compounds
- Silicon solar cells
- Solar cells
- Solar equipment
- Spectra
- Substrates
- Thin films
- Tin compounds
- Tin oxides
- Collection
- NTIS collection.
- Note
- DOE contract number: AC02-76CH00016
OSTI Identifier 6804299
Research organization: Brookhaven National Lab. (BNL), Upton, NY (United States).
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