Actions for Ion implanted lateral in 2Ga

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Ion implanted lateral in 2Ga /sub 8/As/GaAs strained-layer superlattice photodetector

Author
Bulman, G. E.
Published
United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Biefeld, R. M., Dawson, L. R., Myers, D. R., Wiczer, J. J., and Zipperian, T. E.

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Summary
A Be/sup +/ implanted lateral In 2Ga /sub 8/As/GaAs SLS photodetector has been fabricated. The devices exhibit good reverse bias characteristics with dark current of less than 6nA at -60 V. Quantum efficiency measurements indicate an uncoated external value of 50% at 20V. Position resolved photocurrent measurements show that carrier collection occurs over a large area (100 ..mu..m x 250 ..mu..m at -50V) with capacitance values less than 1 pF. This is the first demonstration of a photodetector which utilizes the preferred direction of conduction that occurs in superlattice structures.
Report Numbers
DE85001365; SAND-84-1581C; CONF-841234-2
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC04-76DP00789
OSTI Identifier 6416210
Research organization: Sandia National Labs., Albuquerque, NM (USA).
View MARC record | catkey: 47347167