Actions for Optimization of transparent electrode for solar cell and chemical vapor deposition of amorphous silicon. Final technical report, 15 September 1980-30 March 1983

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Optimization of transparent electrode for solar cell and chemical vapor deposition of amorphous silicon. Final technical report, 15 September 1980-30 March 1983

Author
Gordon, R.
Published
United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Ellis, F., Kurtz, S., and Proscia, J.

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Summary
Solar photovoltaic cell designs usually benefit from a front surface which is both transparent and highly conductive to electricity. A practical transparent electrode layer must also be durable, stable to weathering and sunlight, inexpensive, nontoxic, nonpolluting, and composed of sufficiently abundant materials to permit widespread use. A film of fluorine-doped tin oxide can meet all these requirements. This report presents a new process for depositing fluorine-doped tin oxide films. Increasing the substrate temperature was identified as a primary variable for obtaining better films. Deposition conditions for obtaining either smooth or rough films were identified, and the surface morphology was characterized by SEM photographs and by measurements of diffuse light scattering. Film growth rates were determined as a function of reactant concentrations. A simple, reliable method was developed for measuring the interfacial or contact resistance between tin oxide and silicon. The contact resistance between highly conductive tin oxide films and highly doped silicon often exceeded 10 ohm-cm2, unacceptably high for efficient solar cell operation. Structures which incorporate a layer of highly doped, electrically conductive titanium oxide between the tin oxide and the silicon showed much lower contact resistances, acceptable for efficient solar cells.
Report Numbers
DE85002923; SERI/STR-211-2446
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC02-83CH10093
OSTI Identifier 5955184
Research organization: Harvard Univ., Cambridge, MA (USA).
View MARC record | catkey: 47347688