Actions for Zone-melting recrystallization for solar cells. Final report, September 1, 1982-August 31, 1984

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Zone-melting recrystallization for solar cells. Final report, September 1, 1982-August 31, 1984

Author
Smith, H. I.
Published
United States : [publisher not identified], 1984
Springfield, Va.: National Technical Information Service, [approximately 1984]
Physical Description
microfiche : negative ; 11 x 15 cm

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Summary
Zone-melting recrystallization (ZMR) of Si on SiO2 has been investigated to determine if the process can be adapted to produce material configurations suitable for low-cost, high-efficiency photovoltaic cells. In addition, we have demonstrated ZMR of InSb, and begun to establish a practical process for Ge ZMR, with the objective of growing GaAs epitaxially on the Ge. Fundamental recrystallization mechanisms, crystallographic characteristics and electrical properties have been studied. Novel means of controlling crystallographic properties have been developed, including: hourglass, vertical-constriction, entrainment, and orientation-filtering techniques. EBIC studies indicated enhanced dopant diffusion along grain boundaries and subboundaries, and showed that the diffusion length of minority carriers is approx. 100..mu..m. DLTS studies showed that ZMR films do not contain deep levels associated with impurities, and have interface-state densities comparable to IC-grade Si wafers. A (100) crystallographic texture can be achieved in 50..mu..m-thick ZMR Si films using the vertical-constriction technique. Such films can provide a double pass of incident light and should be suitable for high-efficiency photovoltaic cells. Both two-sided and back-contact cells have been fabricated which showed good blue response and modest efficiency. The ZMR process should enable one to produce thick single-crystal Si films directly on the windows of photovoltaic modules. This should lead to practical, low-cost, high-efficiency single crystal cells.
Report Numbers
DE85004783; DOE/ER/13019-2
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC02-82ER13019
OSTI Identifier 6226513
Research organization: Massachusetts Inst. of Tech., Cambridge (USA).
View MARC record | catkey: 47349070