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Density of gap states in hydrogenated amorphous silicon

Author
Yahya, E.
Published
United States : [publisher not identified], 1985
Springfield, Va.: National Technical Information Service, [approximately 1985]
Physical Description
microfiche : negative ; 11 x 15 cm

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Summary
Amorphous silicon hydride films have been grown by an improved rf sputtering method in a hydrogen-argon atmosphere. Deposition parameters such as substrate temperature, gas flow rate, rf power, and argon partial pressure were kept constant, while hydrogen partial pressure was varied. The infrared vibrational modes, optical absorption, conductivity, and density of gap states from the Fermi level upward toward the conduction band edge of these films have been studied as a function of hydrogen content of the films. The density of states distribution of the films has been deduced from Space Charge Limited Current measurements with an Au/a-Si:H Schottky diode structure. Samples with about 15.5% at. H have densities of states of 3 x 10/sup 14/ states/cm3 eV and show large majority carrier mobility-lifetime products of 10/sup -5/ cm2V/sup -1/. An Au/a-Si:H diode which is nearly ideal (diode quality factor = 1.05) was obtained for a-Si:H films with hydrogen concentrations of about 16 at. %. The experimental results indicate that a high quality a-Si:H material with a low density of states of 3 x 10/sup 14/ states/cm3 eV can be obtained by rf sputtering method. 62 references, 40 figures, 3 tables.
Report Numbers
DE85005504; IS-T-1163
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: W-7405-ENG-82
OSTI Identifier 6222176
Research organization: Ames Lab., IA (USA).
View MARC record | catkey: 47350279