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Comparison of ion milling techniques for cross-sectional TEM of semiconductors

Author
Luck, J. T.
Published
United States : [publisher not identified], 1985
Springfield, Va.: National Technical Information Service, [approximately 1985]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Boggs, C. W. and Pennycook, S. J.

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Summary
The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required with produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.
Report Numbers
DE85016596; CONF-850840-16
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC05-84OR21400
OSTI Identifier 5384573
Research organization: Oak Ridge National Lab., TN (USA).
View MARC record | catkey: 47356940