Actions for New ideas for photovoltaic conversion. Subcontract annual report
New ideas for photovoltaic conversion. Subcontract annual report
- Author
- Borrego, J. M.
- Published
- United States : [publisher not identified], 1985
Springfield, Va.: National Technical Information Service, [approximately 1985] - Physical Description
- microfiche : negative ; 11 x 15 cm
- Additional Creators
- Ghandhi, S. K.
- Summary
- This report is a summary of the results obtained in the first year of a research program investigating the feasibility of using graded-band-gap solar cells under high illumination as an alternative to tandem cells. The graded-gap structure, studied both experimentally and theoretically, consisted of a p-Ga/sub 1-x/Al/sub x/As graded region from x = 0.33 to x = 0, followed by a GaAs p-n junction. The results indicate that the lightly doped p-region enhances the open-circuit voltage of the cell but deteriorates the fill factor. Problems associated with the growth of the layers are also outlined in this report.
- Report Numbers
- DE85016852; SERI/STR-211-2735
- Other Subject(s)
- 14 solar energy
- 140501 - solar energy conversion- photovoltaic conversion
- Aluminium arsenides
- Aluminium compounds
- Arsenic compounds
- Arsenides
- Boundary conditions
- Computerized simulation
- Crystal growth
- Direct energy converters
- Efficiency
- Electric conductivity
- Electrical properties
- Equipment
- Gallium arsenide solar cells
- Gallium arsenides
- Gallium compounds
- Graded band gaps
- Junctions
- Luminescence
- Materials
- P-n junctions
- Photoelectric cells
- Photoluminescence
- Photovoltaic cells
- Physical properties
- Pnictides
- Research programs
- Semiconductor junctions
- Semiconductor materials
- Simulation
- Solar cells
- Solar equipment
- Collection
- NTIS collection.
- Note
- DOE contract number: AC02-83CH10093
OSTI Identifier 5392370
Research organization: Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Electrical, Computer, and Systems Engineering.
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