A detailed experimental evaluation of ASEC n/p textured Si concentrator cells has been completed. Cell measurements in conjunction with detailed modelling indicated that 21% efficient cells at 100X concentration are possible with current baseline technology. Front surface passivation was found to be the principal area for improvement, followed by the reduction of gridline metal/silicon contact recombination. These improvements should result in 22 to 23% efficiencies at 100 to 200X concentration. Achievement of Si concentrator cell efficiencies above 23% will require the development of thin lightly doped advanced Si devices.