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Variations in the refractive index of the near-surface region of low energy hydrogen ion bombarded silicon

Author
Pettit, R. B.
Published
United States : [publisher not identified], 1985
Springfield, Va.: National Technical Information Service, [approximately 1985]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Panitz, J. K. G.

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Summary
Using ellipsometric analysis, the complex index of refraction of low-energy, hydrogen ion bombarded, (100) single-crystal silicon was measured as a function of distance from the bombarded surface. The bombardment conditions were a 1600 eV hydrogen beam produced by a Kaufman ion source, 1.4 mA/cm2 flux, 2 x 10/sup 18/ ions/cm2 fluence and 275/sup 0/C bulk silicon temperature. These conditions are comparable to the conditions generally reported to result in a substantial increase in the electrical conductivity of polycrystalline silicon solar cell material. Results indicate that the real and imaginary parts of the refractive index of the ion bombarded surface region approach that of the unbombarded substrate at a depth of 50 nm. The refractive index of about the first 10 nm of ion bombarded material is strongly dependent on the bombardment conditions. Variations in the imaginary part of the refractive index indicate that approximately 10% of incident radiation is absorbed by the first 50 nm of modified material.
Report Numbers
DE86003500; SAND-85-1177C; CONF-851217-4
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC04-76DP00789
OSTI Identifier 6406435
Research organization: Sandia National Labs., Albuquerque, NM (USA).
View MARC record | catkey: 47360568