Actions for Effects of ion bombardment in plasma polymerization

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Effects of ion bombardment in plasma polymerization

Author
Buss, R. J.
Published
United States : [publisher not identified], 1986
Springfield, Va.: National Technical Information Service, [approximately 1986]
Physical Description
microfiche : negative ; 11 x 15 cm

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Summary
A molecular beam probe technique has been used to investigate the role of ion bombardment of the film surface during the plasma polymerication process. Thin films have been deposited in a vacuum chamber from a molecular beam containing all the plasma species and these were compared with similar deposits from a beam with the charged particles deflected away. A comparison was made of deposition rates, vis/uv and ir absorption spectra of the films. It was found that the deposition rate was increased 20% with the elimination of ion bombardment. Ions incident on the film surface during deposition cause a net ablation of the film. The ion bombardment also causes an increased absorption of uv and near-uv light by the film resulting in a noticeable yellowing. No change was observed in the ir spectra of the films with ion deflection. 7 refs., 3 figs.
Report Numbers
DE86007702; SAND-85-2350C; CONF-860445-1
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC04-76DP00789
OSTI Identifier 6102071
Research organization: Sandia National Labs., Albuquerque, NM (USA).
View MARC record | catkey: 47363546