Actions for Radiation-induced segregation in light-ion bombarded Ni-8% Si.

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Radiation-induced segregation in light-ion bombarded Ni-8% Si.

Author
Packan, N. H.
Published
United States : [publisher not identified], 1986
Springfield, Va.: National Technical Information Service, [approximately 1986]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Heatherly, L., Kesternich, W., and Schroeder, H.

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Summary
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency.
Report Numbers
DE86009155; CONF-860605-13
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC05-84OR21400
OSTI Identifier 5831700
Research organization: Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung.
Research organization: Oak Ridge National Lab., TN (USA).
View MARC record | catkey: 47364041