Actions for Evaluation of local strain fields at (001) twist boundaries in silicon with transmission electron microscope diffraction : Final subcontract report

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Evaluation of local strain fields at (001) twist boundaries in silicon with transmission electron microscope diffraction : Final subcontract report

Author
Sullivan, T.
Published
United States : [publisher not identified], 1987
Springfield, Va.: National Technical Information Service, [approximately 1987]
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Ast, D. G.

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Summary
This report describes work done to evaluate the local strain fields at (001) twist boundaries in silicon by means of transmission electron microscope diffraction studies. The research focused on silicon solar cells fabricated from polycrystalline materials. The intent was to investigate the way in which the electrical activity at grain boundaries affects the performance of the solar cell, with a view to ultimately increasing the stability of this semiconductor material.
Report Numbers
DE87001173; SERI/STR-211-3148
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC02-83CH10093
OSTI Identifier 6448150
Research organization: Cornell Univ., Ithaca, NY (United States).
View MARC record | catkey: 47370422