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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li.

Author
Li, Sheng S., 1938-
Published
Washington : U.S. Dept. of Commerce, National Bureau of Standards, 1979.
Washington : For sale by the Supt. of Docs., U.S. Govt. Print. Off.
Physical Description
vi, 42 pages : graphs ; 26 cm.
Additional Creators
United States. Defense Advanced Research Projects Agency and National Science Foundation (U.S.)

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Series
Report Numbers
C13.10:400-47
Subject(s)
Note
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."
Bibliography Note
Includes bibliographical references and index.
View MARC record | catkey: 7515970