The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber [and others].

Published: Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards, [1981]
Washington, D.C. : For sale by the Supt. of Docs., U.S. G.P.O.
Physical Description: v, 47 pages ; 26 cm.
Additional Creators: Thurber, W. Robert

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Series

Report Numbers

C 13.10:400-64

Subject(s)

Note

"Issued May 1981."

Bibliography Note

Includes bibliographical references.

View MARC record | catkey: 7516019

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