Layered structures and interface kinetics : their technology and applications / edited by S. Furukawa

Published: Tokyo : KTK Scientific ; Dordrecht [Netherlands] ; Boston : Reidel ; Hingham, MA : Distributed in the U.S.A. and Canada by Kluwer, c1985.
Physical Description: viii, 369 p. : ill. ; 24 cm.
Additional Creators: Furukawa, S. (Seijirō), 1934-, National Science Foundation (U.S.), Nihon Gakujutsu Shinkōkai, and U.S.-Japan Seminar on "Solid Phase Epitaxy and Interface Kinetics" (1983 : Ōise-machi, Japan)

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Contents

INTERFACE KINETICS: Crystal growth dynamics by pulsed laser melting of single crystal silicon / G.J. Galvin, J.W. Mayer, and M.O. Thompson -- Atomic process of crystallization in pulsed laser annealing of semiconductor crystals / J. Chikawa, F. Sato, and T. Sunada -- Low temperature reactions at si-metal contacts-from SiC2 growth due to Si-Au reaction to the mechanism of silicide formation / A. Hiraki -- EPITAXIAL GROWTH OF SEMICONDUCTOR FILMS: Kinetics of solid phase crystallization in ion-implanted and deposited amorphous silicon films / G.L. Olson et al. -- Epitaxial growth of Si over amorphous Si buffer layer sputtered on sapphire substrate / M. Ishida et al. -- Crystallization kinetics of amorphous silicon on sapphire / C.S. Pai, S.S. Lau, and I. Suni -- Improvement of crystalline quality of silicon films on sapphire by implantation and solid-phase epitaxy / T. Yoshi, S. Taguchi, and H. Tango -- Transformation of CVD poly-Si films on Si substrates into single crystal during rapid-thermal annealing / N. Natsuaki, M. Tamura, and T. Tokuyama -- EPITAXIAL GROWTH OF SILICIDE AND INSULATOR FILMS: Formation of epitaxial silicides and insulators on Si and other semiconductors / J.M. Poate -- Amorphous phase formation and recrystallization in ion-implanted silicides / C.A. Hewett et al. -- Formation of smooth CoSi2 films by solid phase epitaxy / S. Furukawa and K. Ishibashi -- Epitaxial growth of group-Ila fluorides/silicon heterostructures / T. Asano and H. Ishiwara -- FORMATION AND PROPERTIES OF SILICIDE FILMS: Necessary conditions for PdSi formation at low temperature / I. Ohdomari and H. Kawarada -- Silicides formed by CW-beam processing: kinetics, thermal stability and oxidation properties / T. W. Sigmon, S.S. Wakita, and J.F. Gibbons -- Mo-silicide formed by ion implantation through metal technique / H. Okabayashi, E. Nagasawa, and M. Morimoto -- Formation of refractory-metal silicides by ion bombardment / T. Kanayama and T. Tsurushima -- Low temperature silicide formation of a Mo-Si system by ion implantation techniques / T. Inada and K. Kishi -- Molybdenum silicide/silicon ohmic contacts / K. Suguro et al. -- Refractory-metal silicides for high-temperature stable schottky contacts to GaAs / N. Yokoyama, T. Ohnishi, and T. Misugi -- DEVICE APPLICATIONS: Nanometer structure electronics and fabrication technology / S. Namba -- MBE-grown GaAs/ N-AlGaAs heteroepitaxial structure for high speed devices / S. Hiyamizu and T. Misugi -- Formation of ohmic contact by implantepitaxy / T. Itoh and H. Takai.

Subject(s)

ISBN

902771939X

Related Titles

Silicon-on-insulator

Note

"Papers presented in US-Japan Seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oise, Japan, June 20-24, 1983 ... co-sponsored by the National Science Foundation and Japan Society for the Promotion of Science"--Pref.
Companion volume containing the other papers presented at seminar published under title: Silicon-on-insulator.
"ASST, advances in solid state technology."

Bibliography Note

Includes bibliographies and index.

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